Paper Title:
Microhardness of 6H- and 4H-SiC Substrates
  Abstract

Knoop microhardness assessments were conducted on a variety of 6H- and 4H-SiC substrates to assess any appreciable differences that may need to be considered in wafer manufacture and general application. Nitrogen-doped, vanadium-doped and unintentionally doped (UID) substrates with both on-axis and 8° off-axis orientations were assessed. In general, the Knoop hardness values fell in the 2000 to 2500 kg/mm2 range (equivalent to approximately 20 to 25 GPa). Hardness values measured in the <1100> crystal direction were significantly higher than in the <11-20> direction. Undoped and vanadium-doped samples were harder than nitrogen-doped samples. For both 6H and 4H nitrogen-doped samples, the hardness was as much as 10% higher for 8° offcut wafers than for on-axis.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
323-326
DOI
10.4028/www.scientific.net/MSF.615-617.323
Citation
C. R. Eddy, P. Wu, I. Zwieback, B. L. VanMil, R. L. Myers-Ward, J. L. Tedesco, A. E. Souzis, D. K. Gaskill, "Microhardness of 6H- and 4H-SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 323-326, 2009
Online since
March 2009
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$32.00
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