Paper Title:
Electrical and Mechanical Properties of Post-Annealed SiCxNy Films
  Abstract

Amorphous SiCxNy films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 °C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiCxNy films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiCxNy films.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
327-330
DOI
10.4028/www.scientific.net/MSF.615-617.327
Citation
M. A. Fraga, M. Massi, I.C. Oliveira, N.C. Cruz, S.G. Dos Santos Filho, "Electrical and Mechanical Properties of Post-Annealed SiCxNy Films", Materials Science Forum, Vols. 615-617, pp. 327-330, 2009
Online since
March 2009
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Price
$32.00
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