Paper Title:
A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
  Abstract

The aim of the present work is to study the evolution and the annihilation of inversion domain boundaries in 3C-SiC during growth. For this investigation conventional and high resolution transmission electron microscopy were employed. It is shown that the physical mechanism which results in the annihilation of inversion domain boundaries in 3C-SiC starting from the 3C-SiC/Si interface is the change of the crystallographic planes in which inversion domain boundaries propagate into the {111} ones. In all cases modeling and simulation analysis by EMS software [1] are in agreement with the experimental results.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
331-334
DOI
10.4028/www.scientific.net/MSF.615-617.331
Citation
A. Mantzari, C. B. Lioutas, E. K. Polychroniadis, "A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth", Materials Science Forum, Vols. 615-617, pp. 331-334, 2009
Online since
March 2009
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$32.00
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