Paper Title:
Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
  Abstract

n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
335-338
DOI
10.4028/www.scientific.net/MSF.615-617.335
Citation
A. A. Lebedev, P. L. Abramov, N. V. Agrinskaya, V. I. Kozub, A. N. Kuznetsov, S. P. Lebedev, G. A. Oganesyan, A.V. Chernyaev, D. Shamshur, M. O. Skvortsova, "Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films", Materials Science Forum, Vols. 615-617, pp. 335-338, 2009
Online since
March 2009
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Price
$35.00
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