Paper Title:
The Silicon Vacancy in SiC
  Abstract

A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
347-352
DOI
10.4028/www.scientific.net/MSF.615-617.347
Citation
E. Janzén, A. Gali, P. Carlsson, A. Gällström, B. Magnusson, N. T. Son, "The Silicon Vacancy in SiC", Materials Science Forum, Vols. 615-617, pp. 347-352, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ivan G. Ivanov, C. Persson, Anne Henry, Erik Janzén
Abstract:A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility...
445
Authors: Andreas Gällström, Björn Magnusson, Erik Janzén
Abstract:The photoluminescence (PL) from the I 1 centre is observed in p-, n-type as well as in compensated samples, using above band gap excitation....
405
Authors: Adam Gali, Andreas Gällström, Nguyen Tien Son, Erik Janzén
Abstract:We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of...
395
Authors: A.L. Sukhachev, A.Y. Strokova, A.V. Malakhovskii
Abstract:The absorption and magnetic circular dichroism spectra of f-f transitions 6H15/2 → 6F3/2, 6F5/2 , 6(F7/2 +H5/2) and 6(F9/2+H7/2) in Dy3+ ion...
557
Authors: Andreas Gällström, Björn Magnusson, Franziska Christine Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl G. Hemmingsson, Erik Janzén
Chapter 3: Physical Properties and Characterization of SiC
Abstract:A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten...
211