Paper Title:
SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC
  Abstract

In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the electronic g-tensor from first principles in the framework of density functional theory, basal antisite pairs SiCCSi + are shown to give rise to the characteristic anisotropic g-tensors found in the electron paramagnetic resonance (EPR) measurements. Additional central hyperfine (hf) splittings of about 100 MHz due to the SiC antisite nuclei are predicted theoretically and also resolved experimentally. We have, thus, identified antisite pairs as a dominant defect in electron and proton irradiated p-type doped 4H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
357-360
DOI
10.4028/www.scientific.net/MSF.615-617.357
Citation
U. Gerstmann, A.P. Seitsonen, F. Mauri, H. J. von Bardeleben, "SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 357-360, 2009
Online since
March 2009
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$32.00
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