Paper Title:
The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC
  Abstract

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons or 1.6 MeV protons. The influence of silane and propane flows used during the epilayers growth on the behaviour of radiation induced EH6,7 levels is studied. Samples grown under different conditions were investigated: 1 sample grown in steps of different C/Si ratio obtained by changing the propane flow only; 1 sample grown in steps of different C/Si ratio obtained by changing the silane flow only; 2 samples grown with a C/Si ratio of 1.5 but with different flows of propane and silane. These investigations revealed that the low thermal stability of EH6,7 (the defects anneal out at temperatures as low as 750K) is due to the magnitude of silane flow used during the growth irrespective of the C/Si ratio. A possible structure of the EH6,7 defect is discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
369-372
DOI
10.4028/www.scientific.net/MSF.615-617.369
Citation
I. Pintilie, L. S. Løvlie, K. Irmscher, G. Wagner, B. G. Svensson, B. Thomas, "The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 369-372, 2009
Online since
March 2009
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