High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 37-40 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.37 |
| Citation | Ryo Tanaka et al., 2009, Materials Science Forum, 615-617, 37 |
| Online since | March, 2009 |
| Authors | Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda |
| Keywords | 3C-SiC, Dipping Method, Solution Growth, Stacking Fault |
| Abstract | Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed crystal was prepared by a CVD method on the undulated Si substrate. 3C-SiC stably grew on the (001) seed crystal. However, dark stripes from the seed crystal to the grown crystal along {111} planes were clearly observed. The stripes were due to the high-density stacking faults extended from the stacking faults in the 3C-SiC epilayer that were induced during the CVD growth on Si substrate. |
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