Paper Title:
High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
  Abstract

Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed crystal was prepared by a CVD method on the undulated Si substrate. 3C-SiC stably grew on the (001) seed crystal. However, dark stripes from the seed crystal to the grown crystal along {111} planes were clearly observed. The stripes were due to the high-density stacking faults extended from the stacking faults in the 3C-SiC epilayer that were induced during the CVD growth on Si substrate.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
37-40
DOI
10.4028/www.scientific.net/MSF.615-617.37
Citation
R. Tanaka, K. Seki, T. Ujihara, Y. Takeda, "High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers", Materials Science Forum, Vols. 615-617, pp. 37-40, 2009
Online since
March 2009
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Price
$32.00
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