Paper Title:
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
  Abstract

Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
377-380
DOI
10.4028/www.scientific.net/MSF.615-617.377
Citation
N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, A. Gali, E. Janzén, "Defects Introduced by Electron-Irradiation at Low Temperatures in SiC", Materials Science Forum, Vols. 615-617, pp. 377-380, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Z. Zolnai, Nguyen Tien Son, Björn Magnusson, Christer Hallin, Erik Janzén
473
Authors: Nguyen Tien Son, T. Umeda, Junichi Isoya, Adam Gali, M. Bockstedte, Björn Magnusson, Alexsandre Ellison, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
Abstract:Electron paramagnetic resonance (EPR) studies of the P6/P7 centers in 4H- and 6H-SiC are reported. The obtained principal values of the...
527
Authors: Junichi Isoya, T. Umeda, N. Mizuochi, Nguyen Tien Son, Erik Janzén, Takeshi Ohshima
Abstract:In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for...
279
Authors: Adam Gali, T. Umeda, Erik Janzén, Norio Morishita, Takeshi Ohshima, Junichi Isoya
Abstract:We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of...
361
Authors: Andreas Scholle, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, Uwe Gerstmann
Abstract:In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with...
403