Paper Title:
Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
  Abstract

To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. Seven intrinsic defects are detected in the high-purity semi-insulating 4H-SiC. From the temperature dependence of the emission rate of each intrinsic defect, its activation energy is approximately determined.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
385-388
DOI
10.4028/www.scientific.net/MSF.615-617.385
Citation
H. Matsuura, M. Takahashi, Y. Kagawa, S. Tano, T. Miyake, "Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy", Materials Science Forum, Vols. 615-617, pp. 385-388, 2009
Online since
March 2009
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