Paper Title:
Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
  Abstract

As-grown and 116 keV electron-irradiated n-type 3C and 4H-SiC epilayers were electrically characterized by means of Fourier-transform deep level transient spectroscopy (FT-DLTS). A total of four deep levels, in the 0.20-0.73 eV range, below the conduction band, have been detected. By considering the band gap offset between 4H and 3C polytypes, we found that the deepest level in 3C-SiC labeled K3 (Ec-0.73 eV) has an energy position close to the EH6/7 level in 4H-SiC. An electron-dose dependence study of K3 and EH6/7, reveals that these two centers display a similar dose dependence behavior, suggesting that they may be related to the same defect.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
389-392
DOI
10.4028/www.scientific.net/MSF.615-617.389
Citation
G. Alfieri, T. Kimoto, "Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes", Materials Science Forum, Vols. 615-617, pp. 389-392, 2009
Online since
March 2009
Keywords
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$32.00
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