Paper Title:
Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
  Abstract

1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
409-412
DOI
10.4028/www.scientific.net/MSF.615-617.409
Citation
J. W. Steeds, N. Peng, W. Sullivan, "Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations", Materials Science Forum, Vols. 615-617, pp. 409-412, 2009
Online since
March 2009
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