Paper Title:
Top Seeded Solution Growth of 3C-SiC Single Crystals
  Abstract

The main problem for the development of 3C-SiC electronics is the lack of an adapted bulk growth process. The seeded sublimation method is not very adapted for the 3C polytype because of the solid-state transition from cubic to hexagonal that occurs at high temperature (above 1800°C). In this paper, we propose a new experimental set-up for the development of a solution route for the growth of high quality 3C-SiC crystals. By a coupled approach involving experiments and global process modeling, we have addressed the problems of dissolution and crystallization, elimination of parasitic nucleation and stabilization of the growth front. With an appropriate control of the different convection mechanisms, a stable growth front is demonstrated, with a growth rate of a few tens of µm/h at 1650°C. Further improvements and potentialities of this approach are discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
41-44
DOI
10.4028/www.scientific.net/MSF.615-617.41
Citation
F. Mercier, D. Chaussende, J. M. Dedulle, M. Pons, R. Madar, "Top Seeded Solution Growth of 3C-SiC Single Crystals", Materials Science Forum, Vols. 615-617, pp. 41-44, 2009
Online since
March 2009
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Price
$32.00
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