Paper Title:
Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing
  Abstract

An attempt is made, in the light of recent developments in the identification of intrinsic defects in 4H SiC, to account for differences that have been reported after electron-irradiation of different samples and to discuss the progression of defects that is observed on annealing. The emphasis is placed on internal stress in the material and on defects involving carbon anti-sites and silicon vacancies because they are readily detected by photoluminescence.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
413-416
DOI
10.4028/www.scientific.net/MSF.615-617.413
Citation
J. W. Steeds, "Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing", Materials Science Forum, Vols. 615-617, pp. 413-416, 2009
Online since
March 2009
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: Zhan Guo Li, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, Lian He Li
Chapter 1: Multifunctional Materials
Abstract:We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam...
12
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625