Paper Title:
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
  Abstract

We describe the potential use of scanning probe microscopy (SPM) to image at nanoscale the charge transport in conductive layers, through dielectrics and barriers and in general for mapping of physical properties in wide band gap materials, processing and devices. Measurements through conductive layers are described discussing the limits and potentialities. Carrier profiling by SPM is presented and critically discussed as a complex method, crossing information from several techniques, to extract more insights related to carrier distribution.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
417-422
DOI
10.4028/www.scientific.net/MSF.615-617.417
Citation
V. Raineri, F. Giannazzo, F. Roccaforte, "Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping", Materials Science Forum, Vols. 615-617, pp. 417-422, 2009
Online since
March 2009
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Price
$32.00
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