Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers

Casady, Jeff B.; Koshka, Yaroslav; Sunkari, Swapna G.; Das, Hrishikesh; Hoff, Carl; Casady, Janna R. B.

Paper Titles

Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC, p.405
Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations, p.409
Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing, p.413
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping, p.417
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers, p.423
Interface States and Barrier Heights on Metal/4H-SiC Interfaces, p.427
Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers, p.431
Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging, p.435
Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach, p.439

Home > Materials Science Forum > Silicon Carbide and Related Materials 2008 > Surface Morphology Improvement and Repeatable...

Paper Title:

Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers

Periodical	Materials Science Forum (Volumes 615 - 617)
Main Theme	Silicon Carbide and Related Materials 2008
Edited by	Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages	423-426
DOI	10.4028/www.scientific.net/MSF.615-617.423
Citation	Swapna G. Sunkari et al., 2009, Materials Science Forum, 615-617, 423
Online since	March, 2009
Authors	Swapna G. Sunkari, Hrishikesh Das, Carl Hoff, Yaroslav Koshka, Janna R. B. Casady, Jeff B. Casady
Keywords	Capacitance Voltage, Defect, Epitaxy, KOH, Nickel Schottky, Silicon Carbide (SiC), Surface Roughness (SR)
Price	US$ 28,-

View full size

Abstract

4H Silicon Carbide (4H-SiC) has a great potential for low-loss power devices due to its superior electrical properties. However, the increase in demand for the power devices requires high quality SiC substrates and epitaxial layers. Mercury probe Capacitance Voltage (Hg CV) measurement is a well known procedure to characterize epi layers grown on SiC substrates, due to its non-destructive technique. However, careful calibration of the tool is very important for repeatable and accurate measurements. Here we present very close repeatability of Hg CV within 2.4% (standard deviation 0.7%), between different Solid State Measurements (SSM) setups compared with Ni Schottky (NiS) CV. In addition to growing uniformly doped epi layers, high surface quality of the epi layer is also needed for improved device performance. Improved process conditions resulted in a smooth epi with a surface roughness Ra 1.2 nm for a 6 µm thick epi layer. Molten Potassium Hydroxide (KOH) etching analysis also revealed a significant correlation between the surface roughness and epi defects.