Paper Title:
Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
  Abstract

Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed. The non-ideality is considered as a result of formation of a thin intermediate dielectric layer between the deposited titanium layer and 4H-SiC. Using experimental current-voltage characteristics, the electro-physical characteristics of Ti contacts such as the energy barrier height, the thickness of the intermediate layer and the energy distribution of the interface trap density are determined.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
431-434
DOI
10.4028/www.scientific.net/MSF.615-617.431
Citation
P. A. Ivanov, A. S. Potapov, T.'yana P. Samsonova, "Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers", Materials Science Forum, Vols. 615-617, pp. 431-434, 2009
Online since
March 2009
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