Paper Title:
Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
  Abstract

This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
443-446
DOI
10.4028/www.scientific.net/MSF.615-617.443
Citation
O. J. Guy, A. Pérez-Tomás, M. R. Jennings, M. Lodzinski, A. Castaing, P. A. Mawby, J. A. Covington, S.P. Wilks, R. Hammond, D. Connolly, S. Jones, J. Hopkins, T. Wilby, N. Rimmer, K. Baker, S. Conway, S. Evans, "Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties", Materials Science Forum, Vols. 615-617, pp. 443-446, 2009
Online since
March 2009
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Price
$35.00
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