Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 45-48 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.45 |
| Citation | Jessica Eid et al., 2009, Materials Science Forum, 615-617, 45 |
| Online since | March, 2009 |
| Authors | Jessica Eid, Irina G. Galben-Sandulache, Georgios Zoulis, Teddy Robert, Didier Chaussende, Sandrine Juillaguet, Antoine Tiberj, Jean Camassel |
| Keywords | 3C-SiC, CF-PVT, KOH Etching, N-Doping |
| Abstract | We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the structural defects, like stacking faults and dislocations. The effect of changing the nitrogen flow rate on the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques. |
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