Paper Title:
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
  Abstract

We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the structural defects, like stacking faults and dislocations. The effect of changing the nitrogen flow rate on the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
45-48
DOI
10.4028/www.scientific.net/MSF.615-617.45
Citation
J. Eid, I. G. Galben-Sandulache, G. Zoulis, T. Robert, D. Chaussende, S. Juillaguet, A. Tiberj, J. Camassel, "Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT", Materials Science Forum, Vols. 615-617, pp. 45-48, 2009
Online since
March 2009
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Price
$32.00
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