Paper Title:
Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
  Abstract

In this work the analysis of thermal diffusion of boron carried out from vapor phase was performed. Two-branch diffusion associated with kick-out and substitution mechanisms was observed. The activation energy and prefactor were calculated from Arrhenius plot for each diffusion branch. It has been established that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of the diffusion profile has mostly deep level D centers.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
453-456
DOI
10.4028/www.scientific.net/MSF.615-617.453
Citation
A.V. Bolotnikov, P. G. Muzykov, A. K. Agarwal, Q. C. J. Zhang, T. S. Sudarshan, "Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 453-456, 2009
Online since
March 2009
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