Paper Title:
Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
  Abstract

Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
461-464
DOI
10.4028/www.scientific.net/MSF.615-617.461
Citation
A. Declémy, C. Dupeyrat, L. Thomé, A. Debelle, "Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments", Materials Science Forum, Vols. 615-617, pp. 461-464, 2009
Online since
March 2009
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