Paper Title:
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes
  Abstract

Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present C-V characteristics like graded junction for low forward bias values, i.e. > 0.4 V , or like abrupt junctions for large reverse bias, i.e. between 0.4V and -10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by C-V analysis.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
469-472
DOI
10.4028/www.scientific.net/MSF.615-617.469
Citation
F. Fabbri, F. Moscatelli, A. Poggi, R. Nipoti, A. Cavallini, "C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes", Materials Science Forum, Vols. 615-617, pp. 469-472, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Pavel A. Ivanov, Igor V. Grekhov
Abstract:High-voltage (900 V) 4H-SiC Schottky-barrier diodes (SBD) terminated with guard pnjunction were fabricated and investigated. The guard...
955
Authors: Shuichi Ono, S. Katakami, Manabu Arai
Abstract:The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The...
675
Authors: Itsara Srithanachai, Surada Ueamanapong, Poopol Rujanapich, Narin Atiwongsangthong, Surasak Niemcharoen, Amporn Poyai, Wisut Titiroongruang
Abstract:Diode leakage current consists of diffusion (Id) and generation current (Ig), which is strongly sensitive...
569
Authors: Itsara Srithanachai, Surada Ueamanapong, Amporn Poyai, Surasak Niemcharoen
Chapter 6: New Materials and Composites Materials
Abstract:This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N...
606
Authors: W. Pengchan, Toempong Phetchakul, Amporn Poyai
Chapter 6: New Materials and Composites Materials
Abstract:This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions...
593