Paper Title:
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
  Abstract

Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
477-480
DOI
10.4028/www.scientific.net/MSF.615-617.477
Citation
M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki, K. Fukuda, "Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing", Materials Science Forum, Vols. 615-617, pp. 477-480, 2009
Online since
March 2009
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Authors: Naoyuki Kawabata, Atsushi Tanaka, Masatoshi Tsujimura, Yoshinori Ueji, Kazuhiko Omote, Hirotaka Yamaguchi, Hirofumi Matsuhata, Kenji Fukuda
2.2 Point and Extended Defects
Abstract:We investigated the effect of the basal plane dislocation (BPD) density in 4H-silicon carbide (SiC) substrates on the forward voltage...
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