Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
| Periodical | Materials Science Forum (Volumes 615 - 617) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 477-480 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.477 |
| Citation | Masahiro Nagano et al., 2009, Materials Science Forum, 615-617, 477 |
| Online since | March, 2009 |
| Authors | Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda |
| Keywords | 4H-SiC, Annealing, Basal Plane Dislocation (BPD), Defect, Device Process, Implantation |
| Price | US$ 28,- |
Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.
