Paper Title:
Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
  Abstract

We proposed a kinetic model for SiC oxidation, named ‘silicon and carbon (Si-C) emission model’, taking into account the emission of Si and C atoms from the SiC–oxide interface, which suppresses the oxidation rate at the interface. Based on the model, we calculated oxide growth rates for SiC (0001) Si- and (000–1) C-face and found that the calculated values exhibit good fits to the measured ones in the entire oxide thickness range for both faces. We also calculated depth profiles of Si and C interstitials and oxidants, and discussed the oxidation mechanism of SiC as well as the difference in the oxidation process of Si-face and C-face.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
489-492
DOI
10.4028/www.scientific.net/MSF.615-617.489
Citation
Y. Hijikata, H. Yaguchi, S. Yoshida, "Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model", Materials Science Forum, Vols. 615-617, pp. 489-492, 2009
Online since
March 2009
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$32.00
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