Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 49-52 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.49 |
| Citation | Marcin Zielinski et al., 2009, Materials Science Forum, 615-617, 49 |
| Online since | March, 2009 |
| Authors | Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel |
| Keywords | 3C-SiC, Bulk Si Wafer Conversion, Liquid Phase Epitaxy (LPE) |
| Abstract | We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented “crucibles”, the elaboration of crack-free (111) “crucibles” and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100µm thick 3C-SiC(100) as well as 30µm thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100µm/h and locally can even reach ~1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material. |
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