Paper Title:
Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
  Abstract

We explain the phenomenon of sodium enhanced oxidation (SEO) using computational techniques, and analyze a set of probable hypotheses, which can elucidate the observation of high inversion channel mobility achieved with SEO. The ability of the Na to screen the interface traps, reduce carbon cluster type of defect formation, and enhance the oxidation rate can be explained using these calculations. We observe an increased availability of electrons near the interface in the presence of Na. The sodium atom also helps in breaking the intramolecular oxygen bond. The electronic and atomic structure of the interface cluster, and electric field computations showed that the carbon cluster formed at the oxide side of the interface could be screened by the Na ion.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
493-496
DOI
10.4028/www.scientific.net/MSF.615-617.493
Citation
A. Chatterjee, K. Matocha, "Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide", Materials Science Forum, Vols. 615-617, pp. 493-496, 2009
Online since
March 2009
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Price
$32.00
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