Paper Title:
Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
  Abstract

We have characterized 4H-SiC–oxide interfaces fabricated by thermal oxidation of SiC using spectroscopic ellipsometry in the wide spectral range from visible to deep UV region. It was found that there exists an interface layer, around 1 nm in thickness, regardless of the oxide thickness from 15 nm to 40 nm. The optical constants of the interface layer have similar spectral dependence to those of SiC, though the absolute value of the refractive indices is 0.5–1 larger than that of SiC. We have discussed the structure of the interface layer based on the oxidation mechanism of SiC, like the Si-emission model.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
505-508
DOI
10.4028/www.scientific.net/MSF.615-617.505
Citation
H. Seki, T. Wakabayashi, Y. Hijikata, H. Yaguchi, S. Yoshida, "Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer", Materials Science Forum, Vols. 615-617, pp. 505-508, 2009
Online since
March 2009
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Price
$32.00
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