Paper Title:
Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
  Abstract

Single event transient currents induced in 6H-SiC MOS capacitors are measured by using oxygen ions. Charges collected from the samples are calculated by the transient currents. Applying the drift-diffusion model to the charges, the diffusion length of electron is estimated. Transient currents induced in the gamma ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after gamma ray irradiation.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
517-520
DOI
10.4028/www.scientific.net/MSF.615-617.517
Citation
N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, K. Kawano, "Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence", Materials Science Forum, Vols. 615-617, pp. 517-520, 2009
Online since
March 2009
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$32.00
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