Paper Title:
Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces
  Abstract

We propose a treatment combining nitrogen plasma exposure and forming gas annealing (FGA) to improve the electrical properties of SiO2/SiC interfaces. Although conventional FGA at 450°C alone is not effective for reducing interface traps and fixed charges, our combination treatment effectively reduces both even at moderate temperatures. We achieved further improvement by applying our treatment at higher (over 900°C) FGA temperatures, including lower interface state density (Dit) values for both deep and shallow energy levels (1 - 4 x 1011 cm-2eV-1). Considering that nitrogen incorporation promotes hydrogen passivation of interface defects, a possible mechanism for the improved electrical properties is that interface nitridation eliminates carbon clusters or Si-O-C bonds, which leads to the formation of simple Si and C dangling bonds that can be readily terminated by hydrogen. We therefore believe that our treatment is a promising method for improving the performance of SiC-based MOS devices.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
525-528
DOI
10.4028/www.scientific.net/MSF.615-617.525
Citation
H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, "Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces", Materials Science Forum, Vols. 615-617, pp. 525-528, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Abstract:We propose a treatment of nitrogen radical irradiation to 4H-SiC surfaces for improving thermally grown SiO2/SiC interfaces. X-ray...
507
Authors: Shuji Katakami, Manabu Arai, Kensuke Takenaka, Yoshiyuki Yonezawa, Hitoshi Ishimori, Mitsuo Okamoto, Kazutoshi Kojima, Kenji Fukuda
Chapter 5: Processing of SiC
Abstract:We investigated the effect of post-oxidation annealing in wet O2 and N2O ambient, following dry O2 oxidation...
709
Authors: Heng Yu Xu, Qian Yang, Xiao Lei Wang, Xin Yu Liu, Yan Li Zhao, Cheng Zhan Li, Heiji Watanabe
Chapter III: Processing of SiC
Abstract:A high-temperature process is used to enhance the COx desorption rate to reduce trap density in SiC/SiO2 interface for...
484