Oxidation Process of SiC by RTP Technique |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 529-532 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.529 |
| Citation | N. Kwietniewski et al., 2009, Materials Science Forum, 615-617, 529 |
| Online since | March, 2009 |
| Authors | N. Kwietniewski, Krystyna Gołaszewska, T.T. Piotrowski, W. Rzodkiewicz, Tomasz Gutt, M. Sochacki, Jan Szmidt, Anna Piotrowska |
| Keywords | Refractive Index, RTP, Surface Trap, Thermal Oxidation |
| Abstract | The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes. |
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