Paper Title:
Oxidation Process of SiC by RTP Technique
  Abstract

The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
529-532
DOI
10.4028/www.scientific.net/MSF.615-617.529
Citation
N. Kwietniewski, K. Gołaszewska, T.T. Piotrowski, W. Rzodkiewicz, T. Gutt, M. Sochacki, J. Szmidt, A. Piotrowska, "Oxidation Process of SiC by RTP Technique", Materials Science Forum, Vols. 615-617, pp. 529-532, 2009
Online since
March 2009
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$32.00
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