Paper Title:
Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
  Abstract

Reliability of the gate oxide is influenced by the device structure and the processes. In the SiC MOSFET, the surface morphology is degraded by the high temperature activation RTA, and the degradation is remarkable on the n+ source region. This study develops the method to suppress the degradation of the reliability of the gate oxide on the carbon face. By utilizing the carbon cap for the RTA and the high density O2 plasma etching to remove the carbon cap, the reliability is drastically improved both on the un-implanted and the implanted surfaces. Especially, the degradation of the reliability is perfectly suppressed on the un-implanted surface.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
549-552
DOI
10.4028/www.scientific.net/MSF.615-617.549
Citation
S. Harada, M. Kato, S. Ito, K. Suzuki, T. Ohyanagi, J. Senzaki, K. Fukuda, H. Okumura, K. Arai, "Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face", Materials Science Forum, Vols. 615-617, pp. 549-552, 2009
Online since
March 2009
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Price
$35.00
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