Thick Epitaxial Layers Growth by Chlorine Addition |
|
| Journal | Materials Science Forum (Volumes 615 - 617) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 55-60 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.55 |
| Citation | Francesco La Via et al., 2009, Materials Science Forum, 615-617, 55 |
| Online since | March, 2009 |
| Authors | Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa |
| Keywords | Chlorine, High Growth Rate, Thick Epitaxial layers |
| Abstract | The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 µm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
