Paper Title:
Thick Epitaxial Layers Growth by Chlorine Addition
  Abstract

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 µm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
55-60
DOI
10.4028/www.scientific.net/MSF.615-617.55
Citation
F. La Via, G. Izzo, M. Camarda, G. Abbondanza, D. Crippa, "Thick Epitaxial Layers Growth by Chlorine Addition", Materials Science Forum, Vols. 615-617, pp. 55-60, 2009
Online since
March 2009
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Price
$32.00
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