Paper Title:
Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation
  Abstract

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
557-560
DOI
10.4028/www.scientific.net/MSF.615-617.557
Citation
T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe, K. Arai, "Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation", Materials Science Forum, Vols. 615-617, pp. 557-560, 2009
Online since
March 2009
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$32.00
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