Paper Title:
Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN
  Abstract

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
565-568
DOI
10.4028/www.scientific.net/MSF.615-617.565
Citation
A. A. Lebedev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R. V. Konakova, Y.Y. Kudryk, V. V. Milenin, V.N. Sheremet, "Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN", Materials Science Forum, Vols. 615-617, pp. 565-568, 2009
Online since
March 2009
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