Paper Title:
On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC
  Abstract

In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-SiC are investigated. The Ni/n-SiC ohmic contact with resistance rc ~ 4.2×10-4 Ω cm2 is formed after annealing at 1050oC. For Ni2Si/n-SiC, the contact resistances were rc ~ 4×10-4 Ωcm2 and rc ~ 3.5×10-4 Ωcm2 after annealing at 1000 and 1050oC, respectively. The non-ohmic I-V characteristics are observed for NiSi2/n-SiC contact even after annealing at 1050oC. The features of ohmic contact formation for Ni-based metallization to 4H n-SiC are discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
573-576
DOI
10.4028/www.scientific.net/MSF.615-617.573
Citation
A. V. Kuchuk, V.P. Kladko, A. Piotrowska, R. Ratajczak, R. Jakieła, "On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 573-576, 2009
Online since
March 2009
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$32.00
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