Paper Title:
Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
  Abstract

Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures from 600 to 750 °C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 °C temperature range, while annealing at around 750 °C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was concluded that the thermodynamically unfavourable NiSi phase appeared in the 600-660 °C temperature range due to the fact that the solid state chemical reaction between Ni and SiC at these temperatures is controlled by nickel diffusion through the titanium barrier.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
577-580
DOI
10.4028/www.scientific.net/MSF.615-617.577
Citation
I. P. Nikitina, K. Vassilevski, A. B. Horsfall, N. G. Wright, A. G. O'Neill, S.K. Ray, C. M. Johnson, "Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 577-580, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Sergio Ferrero, A. Albonico, Umberto M. Meotto, G. Rambolà, Samuele Porro, Fabrizio Giorgis, Denis Perrone, Luciano Scaltrito, E. Bontempi, L.E. Depero, G. Richieri, Luigi Merlin
Abstract:In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed...
733
Authors: Reza Ghandi, Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling
Abstract:This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer...
635
Authors: Sandra Heim, Andreas Albrecht, Wolfgang Bartsch
Abstract:In this work we discuss a structure of a p-doped Poly-Si layer and a Ni layer deposited onto n-type 4H-SiC in order to form a Schottky-like...
665
  | Authors: Satoshi Tanimoto, Masanori Miyabe, Takamitsu Shiiyama, Tatsuhiro Suzuki, Hiroshi Yamaguchi, Shinichi Nakashima, Hajime Okumura
Abstract:There is still little consensus regarding why low contact resistivity is achieved when Ni on n-type 4H- and 6H-SiC is annealed at...
465
Authors: S.I. Sidorenko, S.M. Voloshko, Yu.M. Мakogon, O.P. Pavlov, I.E. Kotenko, S.O. Zamulko, S.I. Konorev
Abstract:By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry...
79