Paper Title:
Process Optimization for High Temperature SiC Lateral Devices
  Abstract

Complementary lateral structures, N-JFETs, P-JFETS and bipolar diodes, have been implemented in p and n-type 4H-SiC wafers with epilayers. The device were optimized using finite element code MEDICITM simulations, based on ion implanted and etched Reduced-Surface-Field structures. Two Ti/Ni alloy composition are found to form ohmic contacts compatibles with high temperature device operation. 900°C and respectively 1000°C post-metallisation annealing during 2min are necessary. The presence of a graphite layer is determined by XPS (X-ray photon spectroscopy) analyses at the metal-semiconductor interface. On the fabricated p and n-type lateral JFETs, in blocking state, breakdown voltage as high as 600V are obtained.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
585-588
DOI
10.4028/www.scientific.net/MSF.615-617.585
Citation
M. Soueidan, M. Lazar, D. M. Nguyen, D. Tournier, C. Raynaud, D. Planson, "Process Optimization for High Temperature SiC Lateral Devices", Materials Science Forum, Vols. 615-617, pp. 585-588, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: R. Navickas, R. Ciulada
Abstract:A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and...
235
Authors: Xiao Rui Wang, Feng Li, Xiao Feng Jia
Abstract:Testing the overlength pile in urban subway engineering is the key for quality control. Because of the limitations of urban construction...
2548
Authors: Hirofumi Nagatsuma, Shin Ichiro Kuroki, Milantha de Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Mikael Östling, Carl Mikael Zetterling
3.1 Doping, Implantation and Contacts
Abstract:4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold...
573