Paper Title:
HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces
  Abstract

We report on new observations made, when 4H-SiC, Si-face substrate mesas, having either low tilt-angle (< 1°) with steps or step-free top surfaces, were exposed to three separate HCl etching conditions for five minutes at temperatures of 1130°C, 1240°C and 1390°C. We observed that HCl was ineffective at 1130°C, as etching was incomplete with abundant surface contamination. At 1240°C, screw dislocations were aggressively etched by HCl, while multiple shallow flat-bottomed etch pits were formed on step-free mesa surfaces. At 1390°C, step-flow etching dominated as large etch pits were formed at screw dislocations and previously step-free surfaces etched inward from mesa edges to form parallel rows of organized steps.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
593-596
DOI
10.4028/www.scientific.net/MSF.615-617.593
Citation
A. J. Trunek, J. A. Powell, P. G. Neudeck, M. Mrdenovich, "HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces", Materials Science Forum, Vols. 615-617, pp. 593-596, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Giovanni Attolini, Matteo Bosi, Francesca Rossi, Bernard Enrico Watts, Giancarlo Salviati, Gábor Battistig, László Dobos, Béla Pécz
Abstract:3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM...
139
Authors: Tetsuo Hatakeyama, Kyoichi Ichinoseki, Hiroshi Yamaguchi, N. Sugiyama, Hirofumi Matsuhata
Chapter 3: Physical Properties and Characterization of SiC
Abstract:The origins of certain types of micrometer-scale surface morphological defects on SiC epitaxial layers are clarified using X-ray topography....
359
Authors: Yong Zhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Koji Sato, Katsunori Danno, Takayuki Shirai, Kazuaki Sato, Takeshi Bessho, Yumiko Takahashi, Yoshiki Yamashita, Keiichi Hirano
2.2 Point and Extended Defects
Abstract:Threading dislocations (TDs) in 4H-SiC have been studied by comparing etch pits formed by NaOH vapor etching with results of synchrotron...
389