Paper Title:
Electrochemical Polishing of p-Type 4H SiC
  Abstract

This article discusses the electrochemical polishing of silicon-face p-type 4H SiC using diluted aqueous HF solution. Etchings on the silicon and carbon faces of SiC samples are performed and compared. The experimental results show that the RMS surface roughness of the electrochemically polished Si-face could be as low as about 2 nm. Carbon-face electrochemical polishing gives a rougher surface. Therefore, silicon-face 4H SiC is a better candidate for MEMS processing. The underlying mechanism is also discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
601-604
DOI
10.4028/www.scientific.net/MSF.615-617.601
Citation
Y. Ke, F. Yan, R. P. Devaty, W. J. Choyke, "Electrochemical Polishing of p-Type 4H SiC", Materials Science Forum, Vols. 615-617, pp. 601-604, 2009
Online since
March 2009
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Price
$32.00
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