Paper Title:
SiC Power Devices: Product Improvement Using Diffusion Soldering
  Abstract

SiC power devices have reached a high market penetration, especially for high-voltage applications like switch mode power supplies. In the past, however, the superior material properties like, e.g., good thermal conductivity, have often not been put to full use due to the limitations of current packaging techniques. Especially the inferior thermal conductivity of current die attach materials have been an obstacle to realise the full potential of SiC technologies. In this paper, we describe in detail the use of diffusion solder for the die attach of SiC chips. Replacing the conventional solder layer by a thin metal stack for diffusion soldering, the thermal conductivity of the device is significantly improved. In addition, we show the positive impact of diffusion soldering on the assembly process and on the device reliability. These results are interesting for, both, SiC diodes and switches.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
613-616
DOI
10.4028/www.scientific.net/MSF.615-617.613
Citation
M. Holz, J. Hilsenbeck, R. Otremba, A. Heinrich, P. Türkes, R. Rupp, "SiC Power Devices: Product Improvement Using Diffusion Soldering", Materials Science Forum, Vols. 615-617, pp. 613-616, 2009
Online since
March 2009
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Price
$32.00
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