Paper Title:
SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
  Abstract

The fabrication of freestanding SiC microstructures on Silicon-On-Insulator (SOI) and semi-insulating Silicon substrates is reported. SiC layers were grown on SOI and semi-insulating Si by chemical vapour deposition (CVD) and to avoid the instability currently obtained in SOI structures, the growth process parameters have been optimized. Isotropic wet chemical etching of the Si sacrificial layer released the electrostatic SiC microstructures patterned by dry etching. Moreover a new concept for reducing the gap between resonators and electrodes by the uses of bistable mobile electrodes is introduced.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
617-620
DOI
10.4028/www.scientific.net/MSF.615-617.617
Citation
M. Placidi, M. Zielinski, G. Abadal, J. Montserrat, P. Godignon, "SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates", Materials Science Forum, Vols. 615-617, pp. 617-620, 2009
Online since
March 2009
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Price
$32.00
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