The Ti/4H-SiC Schottky barrier diodes with a field limiting ring (FLR) structure are fabricated. Two types of SBDs are prepared; one (SBD-A) is covered and another (SBD-B) isn’t covered with a carbon cap during high temperature annealing after ion implantation. The breakdown voltage at room temperature for SBD-A and SBD-B are 1400 V and 1000 V, respectively. The breakdown for both SBDs occurs due to an avalanche breakdown. The light emission images are obtained at the breakdown voltage by photo emission microscope (PEM). The light emission is observed along an FLR of the SBD-A as designed. On the other hand, the spot of light emission is observed on a FLR structure of the SBD-B. This light emission spot indicates that leakage current is concentrated because an electrical field concentration is generated at this one for the SBD-B. The root-mean-square roughness of the Al-implanted region on the FLR structure calculated from the atomic force microscopy (AFM) images for the SBD-A and the SBD-B are 0.697 nm and 5.58 nm, respectively. Therefore it is considered that large surface roughness on the FLR decreases breakdown voltage of SBD because an electrical field concentration is generated at a spot.