Paper Title:
Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC
  Abstract

The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
651-654
DOI
10.4028/www.scientific.net/MSF.615-617.651
Citation
C. Koliakoudakis, J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou, K. Zekentes, "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 651-654, 2009
Online since
March 2009
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Price
$32.00
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