Paper Title:
The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
  Abstract

The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
667-670
DOI
10.4028/www.scientific.net/MSF.615-617.667
Citation
G. M. Dolny, R. L. Woodin, T. Witt, J. Shovlin, "The Impact of Schottky Barrier Tunneling on SiC-JBS Performance", Materials Science Forum, Vols. 615-617, pp. 667-670, 2009
Online since
March 2009
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Price
$32.00
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