Paper Title:

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

Periodical Materials Science Forum (Volumes 615 - 617)
Main Theme Silicon Carbide and Related Materials 2008
Edited by Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages 67-72
DOI 10.4028/www.scientific.net/MSF.615-617.67
Citation Hidekazu Tsuchida et al., 2009, Materials Science Forum, 615-617, 67
Online since March, 2009
Authors Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano
Keywords Basal Plane Dislocation (BPD), Epitaxial Growth, Extended Defect, Topography
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The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no basal plane dislocations (BPDs) is obtained using 4º off Si-face substrates, although the formation of 3C-polytype inclusions is occasionally observed. The behavior of BPDs and threading screw dislocations (TSDs) in epitaxial growth is also investigated by X-ray topography and transmission electron microscopy, and the propagation of BPDs and conversion and generation of TSDs in the epilayers are discussed.

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