Paper Title:
Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
  Abstract

Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
671-674
DOI
10.4028/www.scientific.net/MSF.615-617.671
Citation
C. Raynaud, D. M. Nguyen, P. Brosselard, A. Pérez-Tomás, D. Planson, J. Millan, "Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses", Materials Science Forum, Vols. 615-617, pp. 671-674, 2009
Online since
March 2009
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