Paper Title:
Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer
  Abstract

The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The breakdown voltage of the graded p+-n junction was calculated using a commercial process/device simulator and considering the ion-implanted distribution of aluminum. To compare the calculated results to the experimental results, a p+/n/n+ diode with an aluminum ion-implanted p+-layer was fabricated on a 2.8-μm-thick 1.1 × 1017-cm-3 n-type epitaxial layer. The breakdown voltage of the fabricated diode showed a higher breakdown voltage than that of the calculation. The cause of the difference in the breakdown voltages between the fabricated diode and the calculation is discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
675-678
DOI
10.4028/www.scientific.net/MSF.615-617.675
Citation
S. Ono, S. Katakami, M. Arai, "Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer", Materials Science Forum, Vols. 615-617, pp. 675-678, 2009
Online since
March 2009
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$32.00
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