Paper Title:
Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation
  Abstract

Electrical properties of p+n 4H-SiC(0001) diode formed by Al ion implantation to n-type epitaxial layer have been investigated as a function of Al doping concentration ranging from 1 x 1020 to 6 x 1020 /cm3 and the operation temperature. The n-type 4H-SiC(0001) epitaxial layer with a net donor concentration of 1 x 1016 /cm3 are multiply implanted by Al ions in the energy range from 30 to 170 keV at elevated temperature of 500 oC with a implantation layer thickness of 350 nm, followed by the annealing at 1900 oC for 1min using EBAS. On-state resistance of diode with Al concentration of 1 x 1020 /cm3 is estimated to be about 4.5 mcm2, while that for diode with Al concentration of 6 x 1020 /cm3 is 1.8 mcm2 at 25 oC. In the sample with Al concentration of 6 x 1020 /cm3 shows the positive temperature coefficient of on-state resistance of diode, while that for sample with Al concentration less than 3 x 1020 /cm3 is negative. The diode formed by Al implantation at the concentration of 6 x 1020 /cm3 is able to operate at the constant current density of 80 A/cm2 at the bias of 2.9 V independent to operation temperature.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
679-682
DOI
10.4028/www.scientific.net/MSF.615-617.679
Citation
M. Satoh, S. Nagata, T. Nakamura, H. Doi , M. Shibagaki, "Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation", Materials Science Forum, Vols. 615-617, pp. 679-682, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn
487
Authors: Y. Ding, K.B. Park, J.P. Pelz, A.V. Los, Michael S. Mazzola
1077
Authors: Koutarou Kawahara, Giovanni Alfieri, Toru Hiyoshi, Gerhard Pensl, Tsunenobu Kimoto
Abstract:The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of bandgap of 4H-SiC which are generated...
651
Authors: Viorel Banu, Phillippe Godignon, Xavier Jordá, Mihaela Alexandru, José Millan
Abstract:This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a...
754
Authors: G.H. Tariq, M. Anis-ur-Rehman
Abstract:To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is...
89