Paper Title:
Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
  Abstract

We have fabricated the four pn-type junction TEGs (Test Element Groups) having different structure. Those TEGs are close to the double-implanted (Di) MOSFETs, step by step from the simple pn diode. Voltage-current (V-I) characteristics of the hundred TEGs having p-well structure show similar blocking characteristics of those of simple pn diodes on the same wafer. This indicates that the p-well structure itself does not cause a significant deterioration on the blocking yield. On the other hand, the yield is significantly influenced by the annealing condition for ion-implanted layer. The oxide-related hard breakdown on the JFET region dominates the blocking yield. The reach-through breakdown of the TEGs having the n+ region within each p-well becomes largely suppressed by the high-temperature and short-time annealing.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
683-686
DOI
10.4028/www.scientific.net/MSF.615-617.683
Citation
R. Kosugi, T. Sakata, Y. Sakuma, K. Suzuki, T. Yatsuo, H. Matsuhata, H. Yamaguchi, I. Nagai, K. Fukuda, H. Okumura, K. Arai, "Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 683-686, 2009
Online since
March 2009
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