Paper Title:
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
  Abstract

Phosphorous implanted n+/p diodes have been included in the masks for manufacturing n-MOSFET devices and processed in the same way of source/drain regions. The diode junctions were made by a P+ implantation at 300°C and a post implantation annealing at 1300°C. The diode emitter area was protected by 0.6 m thick CVD oxide during the processing of the MOSFET gate oxide. Three gate oxide processes were taken into account: two of them include a N implantation before a wet oxidation, while the third one was a standard oxidation. Considering the effect on the n+/p diodes, the main difference among the processes were the wet thermal oxidation time that ranged between 180 and 480 min at a temperature of 1100°C. The diode current-voltage characteristics show similar forward but different reverse curves in the temperature range of 25-290°C. Differences in reverse bias voltage as a function of the measurement temperature have been analyzed and are related to the different gate oxidation time. A correlation between the shortest oxidation time and the lower leakage current is presented.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
687-690
DOI
10.4028/www.scientific.net/MSF.615-617.687
Citation
F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani, M. Sanmartin, "Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET", Materials Science Forum, Vols. 615-617, pp. 687-690, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dae Hwan Kim, Hoon Joo Na, Sang Yong Jung, In Bok Song, Myung Yoon Um, Ho Keun Song, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim
1001
Authors: Mihai Lazar, G.C. Cardinali, Christophe Raynaud, Antonella Poggi, Dominique Planson, Roberta Nipoti, Jean-Pierre Chante
1025
Authors: R. Pérez, Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Miquel Vellvehi
Abstract:In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed...
945
Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante
Abstract:Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate...
901
Authors: Koji Nakayama, Atsushi Tanaka, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
Chapter 6: SiC Devices, Circuits and Systems
Abstract:The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick...
989